SI6435ADQ vishay siliconix new product document number: 71104 s-99421erev. a, 29-nov-99 www.vishay.com faxback 408-970-5600 2-1 p-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.030 @ v gs = 10 v 5.5 30 0.055 @ v gs = 4.5 v 4.1 SI6435ADQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view s* g d p-channel mosfet * source pins 2, 3, 6 and 7 must be tied common.
parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 5.5 4.7 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.5 3.7 a pulsed drain current (10 s pulse width) i dm 30 a continuous source current (diode conduction) a i s 1.35 0.95 maximum power dissipation a t a = 25 c p d 1.5 1.05 w maximum power dissipation a t a = 70 c p d 1.0 0.67 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol typical maximum unit maximum junction - to - ambient a t 10 sec r thja 65 83 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 100 120 c/w maximum junction-to-foot steady state r thjf 43 52 notes a. surface mounted on 1o x 1o fr4 board.
SI6435ADQ vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 71104 s-99421erev. a, 29-nov-99
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 70 c 10 a on - state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a on - state drain current a i d(on) v ds 5 v, v gs = 4.5 v 7 a drain source on state resistance a r ds( ) v gs = 10 v, i d = 5.5 a 0.024 0.030 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 4.1 a 0.042 0.055 forward transconductance a g fs v ds = 15 v, i d = 5.5 a 12 s diode forward voltage a v sd i s = 1.3 a, v gs = 0 v 0.8 1.1 v dynamic b total gate charge q g v15vv5vi55a 15 20 c gate-source charge q gs v ds = 15 v, v gs = 5 v, i d = 5.5 a 5.7 nc gate-drain charge q gd 5.0 turn-on delay time t d(on) v15vr15 12 20 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 10 20 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 42 60 ns fall time t f 17 25 source-drain reverse recovery time t rr i f = 1.3 a, di/dt = 100 a/ s 40 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
0 6 12 18 24 30 012345 0 6 12 18 24 30 0246810 v gs = 10 thru 5 v t c = 125 c 55 c 2 v 25 c output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d 4 v 3 v
SI6435ADQ vishay siliconix new product document number: 71104 s-99421erev. a, 29-nov-99 www.vishay.com faxback 408-970-5600 2-3
on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 50 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 6 12 18 24 30 0 0.03 0.06 0.09 0.12 0.15 0 6 12 18 24 30 v ds drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 5.5 a i d drain current (a) v gs = 10 v i d = 5.5 a v gs = 10 v gate charge on-resistance vs. drain current gate-to-source voltage (v) q g total gate charge (nc) c capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.05 0.10 0.15 0.20 0246810 t j = 25 c i d = 5.5 a 30 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s v gs = 4.5 v t j = 150 c
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